IXFB82N60Q3 IXYS
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Q3-Class; unipolar; 600V; 82A; 1560W; 300ns
Drain-source voltage: 600V
Drain current: 82A
Case: PLUS264™
Polarisation: unipolar
On-state resistance: 75mΩ
Power dissipation: 1.56kW
Technology: HiPerFET™; Q3-Class
Kind of channel: enhanced
Gate charge: 275nC
Reverse recovery time: 300ns
Gate-source voltage: ±30V
Kind of package: tube
Mounting: THT
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Q3-Class; unipolar; 600V; 82A; 1560W; 300ns
Drain-source voltage: 600V
Drain current: 82A
Case: PLUS264™
Polarisation: unipolar
On-state resistance: 75mΩ
Power dissipation: 1.56kW
Technology: HiPerFET™; Q3-Class
Kind of channel: enhanced
Gate charge: 275nC
Reverse recovery time: 300ns
Gate-source voltage: ±30V
Kind of package: tube
Mounting: THT
Type of transistor: N-MOSFET
на замовлення 19 шт:
термін постачання 21-30 дні (днів)
Кількість | Ціна без ПДВ |
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1+ | 2257.56 грн |
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Технічний опис IXFB82N60Q3 IXYS
Description: MOSFET N-CH 600V 82A PLUS264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 82A (Tc), Rds On (Max) @ Id, Vgs: 75mOhm @ 41A, 10V, Power Dissipation (Max): 1560W (Tc), Vgs(th) (Max) @ Id: 6.5V @ 8mA, Supplier Device Package: PLUS264™, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 275 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 13500 pF @ 25 V.
Інші пропозиції IXFB82N60Q3 за ціною від 2709.08 грн до 2781.32 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||
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IXFB82N60Q3 | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Q3-Class; unipolar; 600V; 82A; 1560W; 300ns Drain-source voltage: 600V Drain current: 82A Case: PLUS264™ Polarisation: unipolar On-state resistance: 75mΩ Power dissipation: 1.56kW Technology: HiPerFET™; Q3-Class Kind of channel: enhanced Gate charge: 275nC Reverse recovery time: 300ns Gate-source voltage: ±30V Kind of package: tube Mounting: THT Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
на замовлення 19 шт: термін постачання 7-14 дні (днів) |
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IXFB82N60Q3 | Виробник : IXYS |
Description: MOSFET N-CH 600V 82A PLUS264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 82A (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 41A, 10V Power Dissipation (Max): 1560W (Tc) Vgs(th) (Max) @ Id: 6.5V @ 8mA Supplier Device Package: PLUS264™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 275 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13500 pF @ 25 V |
на замовлення 21 шт: термін постачання 21-31 дні (днів) |
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IXFB82N60Q3 | Виробник : Littelfuse | Trans MOSFET N-CH 600V 82A 3-Pin(3+Tab) PLUS 264 |
товар відсутній |
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IXFB82N60Q3 | Виробник : IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 600V/82A |
товар відсутній |