IXFE55N50 IXYS
Виробник: IXYS
Description: MOSFET N-CH 500V 47A SOT-227B
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: SOT-227B
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 27.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
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Технічний опис IXFE55N50 IXYS
Description: MOSFET N-CH 500V 47A SOT-227B, Drain to Source Voltage (Vdss): 500 V, Vgs (Max): ±20V, Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Chassis Mount, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: SOT-227B, Vgs(th) (Max) @ Id: 4.5V @ 8mA, Power Dissipation (Max): 500W (Tc), Rds On (Max) @ Id, Vgs: 90mOhm @ 27.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 47A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Package / Case: SOT-227-4, miniBLOC, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V.
