IXFH100N25P Littelfuse Inc.
Виробник: Littelfuse Inc.
Description: MOSFET N-CH 250V 100A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 50A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V
Description: MOSFET N-CH 250V 100A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 50A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V
на замовлення 438 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 1038.39 грн |
| 30+ | 608.88 грн |
| 120+ | 523.20 грн |
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Технічний опис IXFH100N25P Littelfuse Inc.
Description: MOSFET N-CH 250V 100A TO247AD, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 27mOhm @ 50A, 10V, Power Dissipation (Max): 600W (Tc), Vgs(th) (Max) @ Id: 5V @ 4mA, Supplier Device Package: TO-247 (IXTH), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V.
Інші пропозиції IXFH100N25P
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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IXFH100N25P | Виробник : Littelfuse |
 Trans MOSFET N-CH 250V 100A 3-Pin(3+Tab) TO-247 |
товару немає в наявності |
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IXFH100N25P | Виробник : Littelfuse |
Trans MOSFET N-CH 250V 100A 3-Pin(3+Tab) TO-247 |
товару немає в наявності |
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IXFH100N25P | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 250V; 100A; 600W; TO247-3 Case: TO247-3 Mounting: THT Kind of package: tube Drain-source voltage: 250V Drain current: 100A On-state resistance: 27mΩ Type of transistor: N-MOSFET Power dissipation: 600W Polarisation: unipolar Gate charge: 185nC Technology: HiPerFET™; Polar™ Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
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IXFH100N25P | Виробник : IXYS |
MOSFETs 100 Amps 250V 0.027 Rds |
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IXFH100N25P | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 250V; 100A; 600W; TO247-3 Case: TO247-3 Mounting: THT Kind of package: tube Drain-source voltage: 250V Drain current: 100A On-state resistance: 27mΩ Type of transistor: N-MOSFET Power dissipation: 600W Polarisation: unipolar Gate charge: 185nC Technology: HiPerFET™; Polar™ Kind of channel: enhancement |
товару немає в наявності |