IXFH110N15T2 IXYS
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 110A; 480W; TO247-3; 85ns
Case: TO247-3
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 150nC
Reverse recovery time: 85ns
On-state resistance: 13mΩ
Drain current: 110A
Drain-source voltage: 150V
Power dissipation: 480W
Kind of channel: enhancement
| Кількість | Ціна |
|---|---|
| 1+ | 481.34 грн |
| 3+ | 401.25 грн |
| 10+ | 395.32 грн |
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Технічний опис IXFH110N15T2 IXYS
Description: MOSFET N-CH 150V 110A TO247AD, Input Capacitance (Ciss) (Max) @ Vds: 8600 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V, Drain to Source Voltage (Vdss): 150 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-247AD (IXFH), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Power Dissipation (Max): 480W (Tc), Rds On (Max) @ Id, Vgs: 13mOhm @ 500mA, 10V, Current - Continuous Drain (Id) @ 25°C: 110A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Інші пропозиції IXFH110N15T2 за ціною від 576.84 грн до 576.84 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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|---|---|---|---|---|---|---|---|
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IXFH110N15T2 | IXYS |
Description: MOSFET N-CH 150V 110A TO247AD Input Capacitance (Ciss) (Max) @ Vds: 8600 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-247AD (IXFH) Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 480W (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
на замовлення 660 шт: термін постачання 21-31 дні (днів) |
|
| IXFH110N15T2 |
|
Виробник: IXYS
Description: MOSFET N-CH 150V 110A TO247AD
Input Capacitance (Ciss) (Max) @ Vds: 8600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AD (IXFH)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 480W (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: MOSFET N-CH 150V 110A TO247AD
Input Capacitance (Ciss) (Max) @ Vds: 8600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AD (IXFH)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 480W (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
на замовлення 660 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 30+ | 576.84 грн |