IXFH110N25T Littelfuse Inc.
Виробник: Littelfuse Inc.
Description: MOSFET N-CH 250V 110A TO247AD
Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247AD (IXFH)
Vgs(th) (Max) @ Id: 4.5V @ 3mA
Power Dissipation (Max): 694W (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 55A, 10V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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Технічний опис IXFH110N25T Littelfuse Inc.
Description: MOSFET N-CH 250V 110A TO247AD, Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V, Drain to Source Voltage (Vdss): 250 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-247AD (IXFH), Vgs(th) (Max) @ Id: 4.5V @ 3mA, Power Dissipation (Max): 694W (Tc), Rds On (Max) @ Id, Vgs: 24mOhm @ 55A, 10V, Current - Continuous Drain (Id) @ 25°C: 110A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Інші пропозиції IXFH110N25T за ціною від 452.88 грн до 727.54 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IXFH110N25T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 110A; 694W; TO247-3 Case: TO247-3 Kind of package: tube Features of semiconductor devices: thrench gate power mosfet Type of transistor: N-MOSFET Mounting: THT Polarisation: unipolar Gate charge: 157nC On-state resistance: 26mΩ Drain current: 110A Drain-source voltage: 250V Power dissipation: 694W Kind of channel: enhancement |
на замовлення 256 шт: термін постачання 14-30 дні (днів) |
|
| IXFH110N25T |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 110A; 694W; TO247-3
Case: TO247-3
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 157nC
On-state resistance: 26mΩ
Drain current: 110A
Drain-source voltage: 250V
Power dissipation: 694W
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 110A; 694W; TO247-3
Case: TO247-3
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 157nC
On-state resistance: 26mΩ
Drain current: 110A
Drain-source voltage: 250V
Power dissipation: 694W
Kind of channel: enhancement
на замовлення 256 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 727.54 грн |
| 10+ | 556.75 грн |
| 30+ | 452.88 грн |