Технічний опис IXFH12N120P
Description: MOSFET N-CH 1200V 12A TO247AD, Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V, Drain to Source Voltage (Vdss): 1200 V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-247AD (IXFH), Vgs(th) (Max) @ Id: 6.5V @ 1mA, Power Dissipation (Max): 543W (Tc), Rds On (Max) @ Id, Vgs: 1.35Ohm @ 500mA, 10V, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube, Vgs (Max): ±30V.
Інші пропозиції IXFH12N120P
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
IXFH12N120P | IXYS |
 Description: MOSFET N-CH 1200V 12A TO247ADInput Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V Drain to Source Voltage (Vdss): 1200 V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-247AD (IXFH) Vgs(th) (Max) @ Id: 6.5V @ 1mA Power Dissipation (Max): 543W (Tc) Rds On (Max) @ Id, Vgs: 1.35Ohm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Vgs (Max): ±30V |
товару немає в наявності |
В кошику од. на суму грн. |
 |
IXFH12N120P | IXYS |
MOSFETs 12 Amps 1200V 1.15 Rds |
товару немає в наявності |
В кошику од. на суму грн. |
| IXFH12N120P |
|
Виробник: IXYS
Description: MOSFET N-CH 1200V 12A TO247AD
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Drain to Source Voltage (Vdss): 1200 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AD (IXFH)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Power Dissipation (Max): 543W (Tc)
Rds On (Max) @ Id, Vgs: 1.35Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Vgs (Max): ±30V
Description: MOSFET N-CH 1200V 12A TO247AD
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Drain to Source Voltage (Vdss): 1200 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AD (IXFH)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Power Dissipation (Max): 543W (Tc)
Rds On (Max) @ Id, Vgs: 1.35Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Vgs (Max): ±30V
товару немає в наявності
В кошику
од. на суму грн.
| IXFH12N120P |
|
Виробник: IXYS
MOSFETs 12 Amps 1200V 1.15 Rds
MOSFETs 12 Amps 1200V 1.15 Rds
товару немає в наявності
В кошику
од. на суму грн.