Технічний опис IXFH12N80P Littelfuse
Description: MOSFET N-CH 800V 12A TO247AD, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 850mOhm @ 500mA, 10V, Power Dissipation (Max): 360W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 2.5mA, Supplier Device Package: TO-247AD (IXFH), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V.
Інші пропозиції IXFH12N80P
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IXFH12N80P | Виробник : IXYS |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; Polar™; unipolar; 800V; 12A; 360W; TO247-3 Case: TO247-3 Mounting: THT Kind of package: tube On-state resistance: 0.85Ω Drain current: 12A Drain-source voltage: 800V Power dissipation: 360W Polarisation: unipolar Gate charge: 51nC Technology: HiPerFET™; Polar™ Kind of channel: enhanced Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
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IXFH12N80P | Виробник : IXYS |
Description: MOSFET N-CH 800V 12A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 850mOhm @ 500mA, 10V Power Dissipation (Max): 360W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 2.5mA Supplier Device Package: TO-247AD (IXFH) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V |
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IXFH12N80P | Виробник : IXYS |
MOSFET DIODE Id12 BVdass800 |
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IXFH12N80P | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 12A; 360W; TO247-3 Case: TO247-3 Mounting: THT Kind of package: tube On-state resistance: 0.85Ω Drain current: 12A Drain-source voltage: 800V Power dissipation: 360W Polarisation: unipolar Gate charge: 51nC Technology: HiPerFET™; Polar™ Kind of channel: enhanced Type of transistor: N-MOSFET |
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