IXFH26N100X Littelfuse Inc.
Виробник: Littelfuse Inc.
Description: MOSFET N-CH 1000V 26A TO247
Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 6V @ 4mA
Power Dissipation (Max): 860W (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
| Кількість | Ціна |
|---|---|
| 1+ | 1326.84 грн |
| 30+ | 840.30 грн |
| 120+ | 797.60 грн |
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Технічний опис IXFH26N100X Littelfuse Inc.
Description: MOSFET N-CH 1000V 26A TO247, Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V, Drain to Source Voltage (Vdss): 1000 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-247, Vgs(th) (Max) @ Id: 6V @ 4mA, Power Dissipation (Max): 860W (Tc), Rds On (Max) @ Id, Vgs: 320mOhm @ 13A, 10V, Current - Continuous Drain (Id) @ 25°C: 26A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Інші пропозиції IXFH26N100X
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
IXFH26N100X | Виробник : IXYS |
MOSFETs 1000V 26A TO-247 Power MOSFET |
товару немає в наявності |