IXFH26N100X Littelfuse Inc.
Виробник: Littelfuse Inc.
Description: MOSFET N-CH 1000V 26A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 13A, 10V
Power Dissipation (Max): 860W (Tc)
Vgs(th) (Max) @ Id: 6V @ 4mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V
| Кількість | Ціна |
|---|---|
| 1+ | 1333.36 грн |
| 30+ | 844.42 грн |
| 120+ | 801.52 грн |
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Технічний опис IXFH26N100X Littelfuse Inc.
Description: MOSFET N-CH 1000V 26A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 26A (Tc), Rds On (Max) @ Id, Vgs: 320mOhm @ 13A, 10V, Power Dissipation (Max): 860W (Tc), Vgs(th) (Max) @ Id: 6V @ 4mA, Supplier Device Package: TO-247, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V.
Інші пропозиції IXFH26N100X
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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IXFH26N100X | Виробник : IXYS |
MOSFETs 1000V 26A TO-247 Power MOSFET |
товару немає в наявності |