Технічний опис IXFH30N50
- MOSFET, N, TO-247
- Transistor Type:MOSFET
- Transistor Polarity:N
- Typ Voltage Vds:500V
- Cont Current Id:30A
- On State Resistance:0.16ohm
- Voltage Vgs Rds on Measurement:10V
- Typ Voltage Vgs th:4V
- Case Style:TO-247
- Termination Type:Through Hole
- Avalanche Single Pulse Energy Eas:1.5J
- Current Temperature:25`C
- Full Power Rating Temperature:25`C
- Max Junction Temperature Tj:150`C
- Max On State Resistance:0.16ohm
- Max Repetitive Avalanche Energy:45mJ
- Max Voltage Vds:500V
- Max Voltage Vgs th:4V
- Min Junction Temperature, Tj:-55`C
- N-channel Gate Charge:227nC
- No. of Pins:3
- No. of Transistors:1
- Power Dissipation:360W
- Power Dissipation Pd:360W
- Pulse Current Idm:120A
- Rate of Voltage Change dv / dt:5V/ns
- Typ Reverse Recovery Time, trr:250ns
- Weight:6g
- Transistor Case Style:TO-247
Інші пропозиції IXFH30N50
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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IXFH30N50 | Виробник : IXYS |
Description: MOSFET N-CH 500V 30A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 15A, 10V Power Dissipation (Max): 360W (Tc) Vgs(th) (Max) @ Id: 4V @ 4mA Supplier Device Package: TO-247AD (IXFH) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 25 V |
товару немає в наявності |
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IXFH30N50 | Виробник : IXYS |
 MOSFETs 30 Amps 500V 0.16 Rds |
товару немає в наявності |