IXFH36N55Q IXYS

Description: MOSFET N-CH 550V 36A TO247AD, Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V, Drain to Source Voltage (Vdss): 550 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-247AD (IXFH), Vgs(th) (Max) @ Id: 4.5V @ 4mA, Power Dissipation (Max): 500W (Tc), Rds On (Max) @ Id, Vgs: 160mOhm @ 500mA, 10V, Current - Continuous Drain (Id) @ 25°C: 36A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.