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Технічний опис IXFH48N60X3 IXYS
Category: THT N channel transistors, Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 48A; Idm: 68A; 520W, Type of transistor: N-MOSFET, Technology: HiPerFET™; X3-Class, Power dissipation: 520W, Case: TO247-3, Mounting: THT, Gate charge: 38nC, Kind of package: tube, Reverse recovery time: 163ns, Pulsed drain current: 68A, Polarisation: unipolar, Drain current: 48A, Kind of channel: enhancement, Drain-source voltage: 600V, Gate-source voltage: ±20V, On-state resistance: 65mΩ.
Інші пропозиції IXFH48N60X3
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
IXFH48N60X3 | IXYS |
 Description: MOSFET ULTRA JCT 600V 48A TO247 |
товару немає в наявності |
В кошику од. на суму грн. |
| IXFH48N60X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 48A; Idm: 68A; 520W Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Power dissipation: 520W Case: TO247-3 Mounting: THT Gate charge: 38nC Kind of package: tube Reverse recovery time: 163ns Pulsed drain current: 68A Polarisation: unipolar Drain current: 48A Kind of channel: enhancement Drain-source voltage: 600V Gate-source voltage: ±20V On-state resistance: 65mΩ |
товару немає в наявності |
В кошику од. на суму грн. |
| IXFH48N60X3 |
|
Виробник: IXYS
Description: MOSFET ULTRA JCT 600V 48A TO247
Description: MOSFET ULTRA JCT 600V 48A TO247
товару немає в наявності
В кошику
од. на суму грн.
| IXFH48N60X3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 48A; Idm: 68A; 520W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Power dissipation: 520W
Case: TO247-3
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Reverse recovery time: 163ns
Pulsed drain current: 68A
Polarisation: unipolar
Drain current: 48A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 48A; Idm: 68A; 520W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Power dissipation: 520W
Case: TO247-3
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Reverse recovery time: 163ns
Pulsed drain current: 68A
Polarisation: unipolar
Drain current: 48A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±20V
On-state resistance: 65mΩ
товару немає в наявності
В кошику
од. на суму грн.