на замовлення 630 шт:
термін постачання 245-254 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 876.37 грн |
| 10+ | 761.23 грн |
| 30+ | 643.96 грн |
| 60+ | 608 грн |
| 120+ | 606 грн |
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Технічний опис IXFH54N65X3 IXYS
Description: MOSFET 54A 650V X3 TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 54A (Tc), Rds On (Max) @ Id, Vgs: 59mOhm @ 27A, 10V, Power Dissipation (Max): 625W (Tc), Vgs(th) (Max) @ Id: 5.2V @ 4mA, Supplier Device Package: TO-247 (IXFH), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3360 pF @ 25 V.
Інші пропозиції IXFH54N65X3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| IXFH54N65X3 | Виробник : IXYS |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 54A; Idm: 70A; 625W Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 54A Pulsed drain current: 70A Power dissipation: 625W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 59mΩ Mounting: THT Gate charge: 49nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 140ns кількість в упаковці: 1 шт |
товар відсутній |
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IXFH54N65X3 | Виробник : IXYS |
Description: MOSFET 54A 650V X3 TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Rds On (Max) @ Id, Vgs: 59mOhm @ 27A, 10V Power Dissipation (Max): 625W (Tc) Vgs(th) (Max) @ Id: 5.2V @ 4mA Supplier Device Package: TO-247 (IXFH) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3360 pF @ 25 V |
товар відсутній |
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| IXFH54N65X3 | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 54A; Idm: 70A; 625W Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 54A Pulsed drain current: 70A Power dissipation: 625W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 59mΩ Mounting: THT Gate charge: 49nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 140ns |
товар відсутній |