IXFH54N65X3 IXYS

Description: MOSFET 54A 650V X3 TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 54A (Tc), Rds On (Max) @ Id, Vgs: 59mOhm @ 27A, 10V, Power Dissipation (Max): 625W (Tc), Vgs(th) (Max) @ Id: 5.2V @ 4mA, Supplier Device Package: TO-247 (IXFH), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3360 pF @ 25 V.