Технічний опис IXFH60N60X3 Littelfuse
Description: MOSFET ULTRA JCT 600V 60A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 51mOhm @ 30A, 10V, Power Dissipation (Max): 625W (Tc), Vgs(th) (Max) @ Id: 5V @ 4mA, Supplier Device Package: TO-247, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 25 V.
Інші пропозиції IXFH60N60X3
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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IXFH60N60X3 | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 60A; Idm: 90A; 625W Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 600V Drain current: 60A Pulsed drain current: 90A Power dissipation: 625W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 51mΩ Mounting: THT Gate charge: 51nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 175ns кількість в упаковці: 1 шт |
товару немає в наявності |
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IXFH60N60X3 | Виробник : Littelfuse Inc. |
Description: MOSFET ULTRA JCT 600V 60A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 51mOhm @ 30A, 10V Power Dissipation (Max): 625W (Tc) Vgs(th) (Max) @ Id: 5V @ 4mA Supplier Device Package: TO-247 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 25 V |
товару немає в наявності |
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IXFH60N60X3 | Виробник : IXYS |
![]() |
товару немає в наявності |
|
IXFH60N60X3 | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 60A; Idm: 90A; 625W Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 600V Drain current: 60A Pulsed drain current: 90A Power dissipation: 625W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 51mΩ Mounting: THT Gate charge: 51nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 175ns |
товару немає в наявності |