IXFH60N65X2-4 IXYS
Виробник: IXYS
Description: MOSFET N-CH 650V 60A TO247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 30A, 10V
Power Dissipation (Max): 780W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 961.47 грн |
| 30+ | 565.59 грн |
| 120+ | 486.60 грн |
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Технічний опис IXFH60N65X2-4 IXYS
Description: MOSFET N-CH 650V 60A TO247-4L, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 52mOhm @ 30A, 10V, Power Dissipation (Max): 780W (Tc), Vgs(th) (Max) @ Id: 5V @ 4mA, Supplier Device Package: TO-247-4L, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V.
Інші пропозиції IXFH60N65X2-4
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
IXFH60N65X2-4 | IXYS |
MOSFETs 650V/60A TO-247-4L |
товару немає в наявності |
В кошику од. на суму грн. |
 |
IXFH60N65X2-4 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 60A; 780W; TO247-4 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 60A Case: TO247-4 Gate-source voltage: ±30V Mounting: THT Kind of package: tube Kind of channel: enhancement Reverse recovery time: 180ns On-state resistance: 52mΩ Power dissipation: 780W Technology: HiPerFET™; X2-Class Gate charge: 108nC |
товару немає в наявності |
В кошику од. на суму грн. |
| IXFH60N65X2-4 |
|
Виробник: IXYS
MOSFETs 650V/60A TO-247-4L
MOSFETs 650V/60A TO-247-4L
товару немає в наявності
В кошику
од. на суму грн.
| IXFH60N65X2-4 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 60A; 780W; TO247-4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Case: TO247-4
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
On-state resistance: 52mΩ
Power dissipation: 780W
Technology: HiPerFET™; X2-Class
Gate charge: 108nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 60A; 780W; TO247-4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Case: TO247-4
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
On-state resistance: 52mΩ
Power dissipation: 780W
Technology: HiPerFET™; X2-Class
Gate charge: 108nC
товару немає в наявності
В кошику
од. на суму грн.