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|---|---|
| 1+ | 846.98 грн |
| 10+ | 653.00 грн |
| 120+ | 473.08 грн |
| 510+ | 421.52 грн |
| 1020+ | 393.65 грн |
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Технічний опис IXFH6N100 IXYS
Description: MOSFET N-CH 1000V 6A TO247AD, Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V, Drain to Source Voltage (Vdss): 1000 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-247AD (IXFH), Vgs(th) (Max) @ Id: 4.5V @ 2.5mA, Power Dissipation (Max): 180W (Tc), Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Інші пропозиції IXFH6N100
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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IXFH6N100 | Виробник : IXYS |
 Description: MOSFET N-CH 1000V 6A TO247ADInput Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Drain to Source Voltage (Vdss): 1000 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-247AD (IXFH) Vgs(th) (Max) @ Id: 4.5V @ 2.5mA Power Dissipation (Max): 180W (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
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