Технічний опис IXFH6N100F Littelfuse
Description: MOSFET N-CH 1000V 6A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Rds On (Max) @ Id, Vgs: 1.9Ohm @ 3A, 10V, Power Dissipation (Max): 180W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 2.5mA, Supplier Device Package: TO-247 (IXFH), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V.
Інші пропозиції IXFH6N100F
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
 |
IXFH6N100F | Виробник : Ixys Corporation |
 Trans MOSFET N-CH 1KV 6A 3-Pin(3+Tab) TO-247AD |
товар відсутній |
|
|
|
IXFH6N100F | Виробник : Littelfuse |
Trans MOSFET N-CH 1KV 6A 3-Pin(3+Tab) TO-247AD |
товар відсутній |
|
 |
IXFH6N100F | Виробник : IXYS |
Description: MOSFET N-CH 1000V 6A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 1.9Ohm @ 3A, 10V Power Dissipation (Max): 180W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 2.5mA Supplier Device Package: TO-247 (IXFH) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V |
товар відсутній |
|
 |
IXFH6N100F | Виробник : IXYS |
MOSFET HiPerRF Power Mosfet 1000V 6A |
товар відсутній |