Технічний опис IXFK100N10 Littelfuse
Description: MOSFET N-CH 100V 100A TO264AA, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 12mOhm @ 75A, 10V, Power Dissipation (Max): 500W (Tc), Vgs(th) (Max) @ Id: 4V @ 8mA, Supplier Device Package: TO-264AA (IXFK), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V.
Інші пропозиції IXFK100N10
| Фото | Назва | Виробник | Інформація |
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IXFK100N10 | Виробник : Littelfuse |
 Trans MOSFET N-CH Si 100V 100A 3-Pin(3+Tab) TO-264AA |
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IXFK100N10 | Виробник : Littelfuse |
Trans MOSFET N-CH Si 100V 100A 3-Pin(3+Tab) TO-264AA |
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IXFK100N10 | Виробник : IXYS |
Description: MOSFET N-CH 100V 100A TO264AA Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 75A, 10V Power Dissipation (Max): 500W (Tc) Vgs(th) (Max) @ Id: 4V @ 8mA Supplier Device Package: TO-264AA (IXFK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V |
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IXFK100N10 | Виробник : IXYS |
MOSFET 100 Amps 100V 0.012 Ohm Rds |
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