IXFK102N30P IXYS
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 102A; 700W; TO264
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 224nC
On-state resistance: 33mΩ
Drain current: 102A
Drain-source voltage: 300V
Power dissipation: 700W
Case: TO264
Kind of channel: enhancement
Mounting: THT
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Технічний опис IXFK102N30P IXYS
Description: MOSFET N-CH 300V 102A TO264AA, Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 224 nC @ 10 V, Drain to Source Voltage (Vdss): 300 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-264AA (IXFK), Vgs(th) (Max) @ Id: 5V @ 4mA, Power Dissipation (Max): 700W (Tc), Rds On (Max) @ Id, Vgs: 33mOhm @ 500mA, 10V, Current - Continuous Drain (Id) @ 25°C: 102A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-264-3, TO-264AA, Packaging: Tube.
Інші пропозиції IXFK102N30P
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
| IXFK102N30P |
MOSFET N-CH 300V 102A TO-264 Транзистори |
товару немає в наявності |
В кошику од. на суму грн. | ||
 |
IXFK102N30P | IXYS |
Description: MOSFET N-CH 300V 102A TO264AA Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 224 nC @ 10 V Drain to Source Voltage (Vdss): 300 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-264AA (IXFK) Vgs(th) (Max) @ Id: 5V @ 4mA Power Dissipation (Max): 700W (Tc) Rds On (Max) @ Id, Vgs: 33mOhm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 102A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. |
 |
IXFK102N30P | IXYS |
MOSFETs 102 Amps 300V 0.033 Rds |
товару немає в наявності |
В кошику од. на суму грн. |
| IXFK102N30P |
|
MOSFET N-CH 300V 102A TO-264 Транзистори
товару немає в наявності
В кошику
од. на суму грн.
| IXFK102N30P |
|
Виробник: IXYS
Description: MOSFET N-CH 300V 102A TO264AA
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 224 nC @ 10 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-264AA (IXFK)
Vgs(th) (Max) @ Id: 5V @ 4mA
Power Dissipation (Max): 700W (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 102A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Description: MOSFET N-CH 300V 102A TO264AA
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 224 nC @ 10 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-264AA (IXFK)
Vgs(th) (Max) @ Id: 5V @ 4mA
Power Dissipation (Max): 700W (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 102A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| IXFK102N30P |
|
Виробник: IXYS
MOSFETs 102 Amps 300V 0.033 Rds
MOSFETs 102 Amps 300V 0.033 Rds
товару немає в наявності
В кошику
од. на суму грн.