IXFK120N65X2 IXYS
Виробник: IXYS
Description: MOSFET N-CH 650V 120A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 60A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Supplier Device Package: TO-264AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15500 pF @ 25 V
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2082.60 грн |
| 25+ | 1324.68 грн |
| 50+ | 1236.94 грн |
| 100+ | 1092.33 грн |
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Технічний опис IXFK120N65X2 IXYS
Description: MOSFET N-CH 650V 120A TO264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 24mOhm @ 60A, 10V, Power Dissipation (Max): 1250W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 8mA, Supplier Device Package: TO-264AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 15500 pF @ 25 V.
Інші пропозиції IXFK120N65X2
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
IXFK120N65X2 | IXYS |
MOSFETs MOSFET 650V/120A Ultra Junction X2 |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. |
 |
IXFK120N65X2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 120A; 1250W; TO264 Power dissipation: 1.25kW Gate charge: 240nC Polarisation: unipolar Technology: HiPerFET™; X2-Class Drain current: 120A Kind of channel: enhancement Drain-source voltage: 650V Type of transistor: N-MOSFET Gate-source voltage: ±30V Kind of package: tube Case: TO264 On-state resistance: 24mΩ Reverse recovery time: 220ns Mounting: THT |
товару немає в наявності |
В кошику од. на суму грн. |
| IXFK120N65X2 |
|
Виробник: IXYS
MOSFETs MOSFET 650V/120A Ultra Junction X2
MOSFETs MOSFET 650V/120A Ultra Junction X2
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику
од. на суму грн.
| IXFK120N65X2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 120A; 1250W; TO264
Power dissipation: 1.25kW
Gate charge: 240nC
Polarisation: unipolar
Technology: HiPerFET™; X2-Class
Drain current: 120A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: TO264
On-state resistance: 24mΩ
Reverse recovery time: 220ns
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 120A; 1250W; TO264
Power dissipation: 1.25kW
Gate charge: 240nC
Polarisation: unipolar
Technology: HiPerFET™; X2-Class
Drain current: 120A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: TO264
On-state resistance: 24mΩ
Reverse recovery time: 220ns
Mounting: THT
товару немає в наявності
В кошику
од. на суму грн.