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Технічний опис IXFK150N30X3 IXYS
Description: MOSFET N-CH 300V 150A TO264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 150A (Tc), Rds On (Max) @ Id, Vgs: 8.3mOhm @ 75A, 10V, Power Dissipation (Max): 890W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 4mA, Supplier Device Package: TO-264, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 300 V, Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 13100 pF @ 25 V.
Інші пропозиції IXFK150N30X3
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
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IXFK150N30X3 | IXYS |
 Description: MOSFET N-CH 300V 150A TO264Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 8.3mOhm @ 75A, 10V Power Dissipation (Max): 890W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 4mA Supplier Device Package: TO-264 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13100 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. |
 |
IXFK150N30X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 150A; 890W; TO264 Mounting: THT Power dissipation: 890W Gate charge: 254nC Polarisation: unipolar Technology: HiPerFET™; X3-Class Drain current: 150A Kind of channel: enhancement Drain-source voltage: 300V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: TO264 On-state resistance: 8.3mΩ Reverse recovery time: 167ns |
товару немає в наявності |
В кошику од. на суму грн. |
 |
IXFK150N30X3 | Littelfuse |
Trans MOSFET N-CH 300V 150A 3-Pin(3+Tab) TO-264 |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. |
|
|
IXFK150N30X3 | Littelfuse |
Trans MOSFET N-CH 300V 150A 3-Pin(3+Tab) TO-264 |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. |
| IXFK150N30X3 |
|
Виробник: IXYS
Description: MOSFET N-CH 300V 150A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 75A, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-264
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13100 pF @ 25 V
Description: MOSFET N-CH 300V 150A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 75A, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-264
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13100 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| IXFK150N30X3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 150A; 890W; TO264
Mounting: THT
Power dissipation: 890W
Gate charge: 254nC
Polarisation: unipolar
Technology: HiPerFET™; X3-Class
Drain current: 150A
Kind of channel: enhancement
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO264
On-state resistance: 8.3mΩ
Reverse recovery time: 167ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 150A; 890W; TO264
Mounting: THT
Power dissipation: 890W
Gate charge: 254nC
Polarisation: unipolar
Technology: HiPerFET™; X3-Class
Drain current: 150A
Kind of channel: enhancement
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO264
On-state resistance: 8.3mΩ
Reverse recovery time: 167ns
товару немає в наявності
В кошику
од. на суму грн.
| IXFK150N30X3 |
|
Виробник: Littelfuse
Trans MOSFET N-CH 300V 150A 3-Pin(3+Tab) TO-264
Trans MOSFET N-CH 300V 150A 3-Pin(3+Tab) TO-264
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику
од. на суму грн.
| IXFK150N30X3 |
|
Виробник: Littelfuse
Trans MOSFET N-CH 300V 150A 3-Pin(3+Tab) TO-264
Trans MOSFET N-CH 300V 150A 3-Pin(3+Tab) TO-264
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику
од. на суму грн.