Технічний опис IXFK160N30T Littelfuse
Description: MOSFET N-CH 300V 160A TO264AA, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 160A (Tc), Rds On (Max) @ Id, Vgs: 19mOhm @ 60A, 10V, Power Dissipation (Max): 1390W (Tc), Vgs(th) (Max) @ Id: 5V @ 8mA, Supplier Device Package: TO-264AA (IXFK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 300 V, Gate Charge (Qg) (Max) @ Vgs: 335 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V.
Інші пропозиції IXFK160N30T
| Фото | Назва | Виробник | Інформація |
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Ціна |
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IXFK160N30T | Виробник : Littelfuse |
 Trans MOSFET N-CH 300V 160A 3-Pin(3+Tab) TO-264 |
товару немає в наявності |
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IXFK160N30T | Виробник : Littelfuse |
Trans MOSFET N-CH 300V 160A 3-Pin(3+Tab) TO-264 |
товару немає в наявності |
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IXFK160N30T | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 300V; 160A; 1390W; TO264 Mounting: THT Technology: GigaMOS™ Polarisation: unipolar Gate charge: 376nC Reverse recovery time: 200ns On-state resistance: 19mΩ Kind of channel: enhancement Case: TO264 Drain current: 160A Power dissipation: 1390W Gate-source voltage: ±20V Drain-source voltage: 300V Kind of package: tube Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
товару немає в наявності |
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IXFK160N30T | Виробник : Littelfuse Inc. |
Description: MOSFET N-CH 300V 160A TO264AA Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 60A, 10V Power Dissipation (Max): 1390W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: TO-264AA (IXFK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 335 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V |
товару немає в наявності |
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IXFK160N30T | Виробник : IXYS |
MOSFETs 160A 300V |
товару немає в наявності |
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IXFK160N30T | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 300V; 160A; 1390W; TO264 Mounting: THT Technology: GigaMOS™ Polarisation: unipolar Gate charge: 376nC Reverse recovery time: 200ns On-state resistance: 19mΩ Kind of channel: enhancement Case: TO264 Drain current: 160A Power dissipation: 1390W Gate-source voltage: ±20V Drain-source voltage: 300V Kind of package: tube Type of transistor: N-MOSFET |
товару немає в наявності |