Технічний опис IXFK170N20P Littelfuse
Description: MOSFET N-CH 200V 170A TO264AA, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 170A (Tc), Rds On (Max) @ Id, Vgs: 14mOhm @ 500mA, 10V, Power Dissipation (Max): 1250W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: TO-264AA (IXFK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11400 pF @ 25 V.
Інші пропозиції IXFK170N20P
| Фото | Назва | Виробник | Інформація |
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Ціна |
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IXFK170N20P | Виробник : Littelfuse |
 Trans MOSFET N-CH 200V 170A 3-Pin(3+Tab) TO-264 |
товару немає в наявності |
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IXFK170N20P | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 170A; 1250W; TO264 Mounting: THT Case: TO264 Reverse recovery time: 200ns Drain-source voltage: 200V Drain current: 170A On-state resistance: 14mΩ Type of transistor: N-MOSFET Power dissipation: 1.25kW Polarisation: unipolar Kind of package: tube Gate charge: 185nC Technology: HiPerFET™; Polar™ Kind of channel: enhancement Gate-source voltage: ±20V кількість в упаковці: 300 шт |
товару немає в наявності |
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IXFK170N20P | Виробник : Littelfuse Inc. |
Description: MOSFET N-CH 200V 170A TO264AA Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 500mA, 10V Power Dissipation (Max): 1250W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-264AA (IXFK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11400 pF @ 25 V |
товару немає в наявності |
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IXFK170N20P | Виробник : IXYS |
MOSFETs 170 Amps 200V 0.014 Rds |
товару немає в наявності |
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IXFK170N20P | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 170A; 1250W; TO264 Mounting: THT Case: TO264 Reverse recovery time: 200ns Drain-source voltage: 200V Drain current: 170A On-state resistance: 14mΩ Type of transistor: N-MOSFET Power dissipation: 1.25kW Polarisation: unipolar Kind of package: tube Gate charge: 185nC Technology: HiPerFET™; Polar™ Kind of channel: enhancement Gate-source voltage: ±20V |
товару немає в наявності |