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IXFK25N90

IXFK25N90 IXYS


littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_26n90_datasheet.pdf.pdf Виробник: IXYS
Description: MOSFET N-CH 900V 25A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 500mA, 10V
Power Dissipation (Max): 560W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10800 pF @ 25 V
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Технічний опис IXFK25N90 IXYS

Description: MOSFET N-CH 900V 25A TO264AA, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), Rds On (Max) @ Id, Vgs: 330mOhm @ 500mA, 10V, Power Dissipation (Max): 560W (Tc), Vgs(th) (Max) @ Id: 5V @ 8mA, Supplier Device Package: TO-264AA (IXFK), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 900 V, Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10800 pF @ 25 V.

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IXFK25N90 IXFK25N90 Виробник : IXYS Littelfuse_Discrete_MOSFETs_N_Channel_HiPerFETs_IX-1673596.pdf MOSFET 25 Amps 900V 0.33 Rds
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