Технічний опис IXFK320N17T2 Littelfuse
Description: MOSFET N-CH 170V 320A TO264AA, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 320A (Tc), Rds On (Max) @ Id, Vgs: 5.2mOhm @ 60A, 10V, Power Dissipation (Max): 1670W (Tc), Vgs(th) (Max) @ Id: 5V @ 8mA, Supplier Device Package: TO-264AA (IXFK), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 170 V, Gate Charge (Qg) (Max) @ Vgs: 640 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 45000 pF @ 25 V.
Інші пропозиції IXFK320N17T2
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IXFK320N17T2 | Виробник : Littelfuse |
 Trans MOSFET N-CH 170V 320A 3-Pin(3+Tab) TO-264 |
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IXFK320N17T2 | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 170V; 320A; 1670W; TO264 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 170V Drain current: 320A Power dissipation: 1670W Case: TO264 On-state resistance: 5.2mΩ Mounting: THT Gate charge: 640nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet кількість в упаковці: 1 шт |
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IXFK320N17T2 | Виробник : IXYS |
Description: MOSFET N-CH 170V 320A TO264AA Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 320A (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 60A, 10V Power Dissipation (Max): 1670W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: TO-264AA (IXFK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 170 V Gate Charge (Qg) (Max) @ Vgs: 640 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 45000 pF @ 25 V |
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IXFK320N17T2 | Виробник : IXYS |
MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET |
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IXFK320N17T2 | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 170V; 320A; 1670W; TO264 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 170V Drain current: 320A Power dissipation: 1670W Case: TO264 On-state resistance: 5.2mΩ Mounting: THT Gate charge: 640nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet |
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