IXFK32N60 IXYS
Виробник: IXYS
Description: MOSFET N-CH 600V 32A TO264AA
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 325 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-264AA (IXFK)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
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Технічний опис IXFK32N60 IXYS
Description: MOSFET N-CH 600V 32A TO264AA, Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 325 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-264AA (IXFK), Vgs(th) (Max) @ Id: 4.5V @ 8mA, Power Dissipation (Max): 500W (Tc), Rds On (Max) @ Id, Vgs: 250mOhm @ 500mA, 10V, Current - Continuous Drain (Id) @ 25°C: 32A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-264-3, TO-264AA, Packaging: Tube.
