IXFK360N10T IXYS
Виробник: IXYS
Description: MOSFET N-CH 100V 360A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 100A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 3mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 525 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 33000 pF @ 25 V
Description: MOSFET N-CH 100V 360A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 100A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 3mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 525 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 33000 pF @ 25 V
на замовлення 232 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 896.75 грн |
25+ | 699.1 грн |
100+ | 657.98 грн |
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Технічний опис IXFK360N10T IXYS
Description: MOSFET N-CH 100V 360A TO264AA, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 360A (Tc), Rds On (Max) @ Id, Vgs: 2.9mOhm @ 100A, 10V, Power Dissipation (Max): 1250W (Tc), Vgs(th) (Max) @ Id: 5V @ 3mA, Supplier Device Package: TO-264AA (IXFK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 525 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 33000 pF @ 25 V.
Інші пропозиції IXFK360N10T за ціною від 576.58 грн до 994.28 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||
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IXFK360N10T | Виробник : IXYS | MOSFET TRENCH HIPERFET PWR MOSFET 100V 360A |
на замовлення 879 шт: термін постачання 21-30 дні (днів) |
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IXFK360N10T | Виробник : Littelfuse | Trans MOSFET N-CH 100V 360A 3-Pin(3+Tab) TO-264 |
товар відсутній |
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IXFK360N10T | Виробник : Littelfuse | Trans MOSFET N-CH 100V 360A 3-Pin(3+Tab) TO-264 |
товар відсутній |
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IXFK360N10T | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 360A; 1250W; TO264 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 360A Power dissipation: 1.25kW Case: TO264 On-state resistance: 2.9mΩ Mounting: THT Gate charge: 525nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet кількість в упаковці: 1 шт |
товар відсутній |
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IXFK360N10T | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 360A; 1250W; TO264 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 360A Power dissipation: 1.25kW Case: TO264 On-state resistance: 2.9mΩ Mounting: THT Gate charge: 525nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet |
товар відсутній |