Технічний опис IXFK360N15T2 Littelfuse
Description: MOSFET N-CH 150V 360A TO264AA, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 360A (Tc), Rds On (Max) @ Id, Vgs: 4mOhm @ 60A, 10V, Power Dissipation (Max): 1670W (Tc), Vgs(th) (Max) @ Id: 5V @ 8mA, Supplier Device Package: TO-264AA (IXFK), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 715 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 47500 pF @ 25 V.
Інші пропозиції IXFK360N15T2
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IXFK360N15T2 | Виробник : Littelfuse |
 Trans MOSFET N-CH 150V 360A 3-Pin(3+Tab) TO-264 |
товару немає в наявності |
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IXFK360N15T2 | Виробник : Littelfuse |
Trans MOSFET N-CH 150V 360A 3-Pin(3+Tab) TO-264 |
товару немає в наявності |
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IXFK360N15T2 | Виробник : IXYS |
Description: MOSFET N-CH 150V 360A TO264AA Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 360A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 60A, 10V Power Dissipation (Max): 1670W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: TO-264AA (IXFK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 715 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 47500 pF @ 25 V |
товару немає в наявності |
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IXFK360N15T2 | Виробник : IXYS |
MOSFETs GigaMOS Trench T2 HiperFET PWR MOSFET |
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IXFK360N15T2 | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 360A; 1670W; TO264 Case: TO264 Mounting: THT Type of transistor: N-MOSFET Kind of channel: enhancement Kind of package: tube Polarisation: unipolar Gate-source voltage: ±20V Gate charge: 715nC Reverse recovery time: 150ns On-state resistance: 4mΩ Drain current: 360A Power dissipation: 1.67kW Drain-source voltage: 150V Technology: GigaMOS™; HiPerFET™; TrenchT2™ |
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