Технічний опис IXFK52N100X IXYS
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 1kV; 52A; 1250W; TO264; 260ns, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 1kV, Drain current: 52A, Power dissipation: 1.25kW, Case: TO264, On-state resistance: 0.125Ω, Mounting: THT, Gate charge: 245nC, Kind of package: tube, Kind of channel: enhanced, Features of semiconductor devices: ultra junction x-class, Reverse recovery time: 260ns, кількість в упаковці: 1 шт.
Інші пропозиції IXFK52N100X
| Фото | Назва | Виробник | Інформація |
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IXFK52N100X | Виробник : Littelfuse |
 Power MOSFET |
товар відсутній |
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IXFK52N100X | Виробник : Littelfuse |
Power MOSFET |
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IXFK52N100X | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 52A; 1250W; TO264; 260ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 52A Power dissipation: 1.25kW Case: TO264 On-state resistance: 0.125Ω Mounting: THT Gate charge: 245nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 260ns кількість в упаковці: 1 шт |
товар відсутній |
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IXFK52N100X | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 52A; 1250W; TO264; 260ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 52A Power dissipation: 1.25kW Case: TO264 On-state resistance: 0.125Ω Mounting: THT Gate charge: 245nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 260ns |
товар відсутній |