Технічний опис IXFK52N100X Littelfuse
Description: MOSFET N-CH 1000V 52A TO264, Rds On (Max) @ Id, Vgs: 125mOhm @ 26A, 10V, Current - Continuous Drain (Id) @ 25°C: 52A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-264-3, TO-264AA, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 6725 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 245 nC @ 10 V, Drain to Source Voltage (Vdss): 1000 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-264, Vgs(th) (Max) @ Id: 6V @ 4mA, Power Dissipation (Max): 1250W (Tc).
Інші пропозиції IXFK52N100X
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
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IXFK52N100X | IXYS |
 Description: MOSFET N-CH 1000V 52A TO264Rds On (Max) @ Id, Vgs: 125mOhm @ 26A, 10V Current - Continuous Drain (Id) @ 25°C: 52A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 6725 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 245 nC @ 10 V Drain to Source Voltage (Vdss): 1000 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-264 Vgs(th) (Max) @ Id: 6V @ 4mA Power Dissipation (Max): 1250W (Tc) |
товару немає в наявності |
В кошику од. на суму грн. |
 |
IXFK52N100X | IXYS |
MOSFETs 52A 1000V POWER MOSFET |
товару немає в наявності |
В кошику од. на суму грн. |
 |
IXFK52N100X | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 52A; 1250W; TO264; 260ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 52A Power dissipation: 1.25kW Case: TO264 On-state resistance: 0.125Ω Mounting: THT Kind of channel: enhancement Gate charge: 245nC Features of semiconductor devices: ultra junction x-class Kind of package: tube Reverse recovery time: 260ns |
товару немає в наявності |
В кошику од. на суму грн. |
 |
IXFK52N100X | Littelfuse |
Power MOSFET |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. |
| IXFK52N100X |
|
Виробник: IXYS
Description: MOSFET N-CH 1000V 52A TO264
Rds On (Max) @ Id, Vgs: 125mOhm @ 26A, 10V
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 6725 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 245 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-264
Vgs(th) (Max) @ Id: 6V @ 4mA
Power Dissipation (Max): 1250W (Tc)
Description: MOSFET N-CH 1000V 52A TO264
Rds On (Max) @ Id, Vgs: 125mOhm @ 26A, 10V
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 6725 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 245 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-264
Vgs(th) (Max) @ Id: 6V @ 4mA
Power Dissipation (Max): 1250W (Tc)
товару немає в наявності
В кошику
од. на суму грн.
| IXFK52N100X |
|
Виробник: IXYS
MOSFETs 52A 1000V POWER MOSFET
MOSFETs 52A 1000V POWER MOSFET
товару немає в наявності
В кошику
од. на суму грн.
| IXFK52N100X |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 52A; 1250W; TO264; 260ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 52A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 0.125Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 245nC
Features of semiconductor devices: ultra junction x-class
Kind of package: tube
Reverse recovery time: 260ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 52A; 1250W; TO264; 260ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 52A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 0.125Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 245nC
Features of semiconductor devices: ultra junction x-class
Kind of package: tube
Reverse recovery time: 260ns
товару немає в наявності
В кошику
од. на суму грн.
| IXFK52N100X |
|
Виробник: Littelfuse
Power MOSFET
Power MOSFET
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику
од. на суму грн.