IXFK55N50

IXFK55N50 Ixys Corporation


rete_mosfets_n-channel_hiperfets_ixf_50n50_datasheet.pdf.pdf Виробник: Ixys Corporation
Trans MOSFET N-CH 500V 55A 3-Pin(3+Tab) TO-264AA
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Технічний опис IXFK55N50 Ixys Corporation

Description: MOSFET N-CH 500V 55A TO264AA, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 55A (Tc), Rds On (Max) @ Id, Vgs: 90mOhm @ 27.5A, 10V, Power Dissipation (Max): 625W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 8mA, Supplier Device Package: TO-264AA (IXFK), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 25 V.

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IXFK55N50 IXFK55N50 Виробник : IXYS media?resourcetype=datasheets&itemid=7f724954-c5b4-4c7e-b19d-87773ab9b1fe&filename=littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_55n50_datasheet.pdf Description: MOSFET N-CH 500V 55A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 27.5A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 25 V
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IXFK55N50 IXFK55N50 Виробник : IXYS media-3321394.pdf MOSFET 500V 55A
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