| Кількість | Ціна |
|---|---|
| 1+ | 1951.89 грн |
| 10+ | 1774.38 грн |
| 25+ | 1472.62 грн |
| 100+ | 1317.20 грн |
| 500+ | 1185.69 грн |
| 1000+ | 1144.20 грн |
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Технічний опис IXFK60N55Q2 IXYS
Description: MOSFET N-CH 550V 60A TO264AA, Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V, Drain to Source Voltage (Vdss): 550 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-264AA (IXFK), Vgs(th) (Max) @ Id: 4.5V @ 8mA, Power Dissipation (Max): 735W (Tc), Rds On (Max) @ Id, Vgs: 88mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-264-3, TO-264AA, Packaging: Tube.
Інші пропозиції IXFK60N55Q2
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
IXFK60N55Q2 | IXYS |
 Description: MOSFET N-CH 550V 60A TO264AAInput Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V Drain to Source Voltage (Vdss): 550 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-264AA (IXFK) Vgs(th) (Max) @ Id: 4.5V @ 8mA Power Dissipation (Max): 735W (Tc) Rds On (Max) @ Id, Vgs: 88mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. |
| IXFK60N55Q2 |
|
Виробник: IXYS
Description: MOSFET N-CH 550V 60A TO264AA
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Drain to Source Voltage (Vdss): 550 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-264AA (IXFK)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Power Dissipation (Max): 735W (Tc)
Rds On (Max) @ Id, Vgs: 88mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Description: MOSFET N-CH 550V 60A TO264AA
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Drain to Source Voltage (Vdss): 550 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-264AA (IXFK)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Power Dissipation (Max): 735W (Tc)
Rds On (Max) @ Id, Vgs: 88mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.