IXFK80N65X2 IXYS
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 80A; 890W; TO264P; 200ns
Mounting: THT
Case: TO264P
Kind of package: tube
Reverse recovery time: 200ns
On-state resistance: 38mΩ
Drain current: 80A
Power dissipation: 890W
Drain-source voltage: 650V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Features of semiconductor devices: ultra junction x-class
Polarisation: unipolar
Gate charge: 0.14µC
| Кількість | Ціна |
|---|---|
| 1+ | 1608.11 грн |
| 2+ | 1253.68 грн |
| 5+ | 1211.36 грн |
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Технічний опис IXFK80N65X2 IXYS
Description: MOSFET N-CH 650V 80A TO264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 40mOhm @ 40A, 10V, Power Dissipation (Max): 890W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 4mA, Supplier Device Package: TO-264AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8245 pF @ 25 V.
Інші пропозиції IXFK80N65X2
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
IXFK80N65X2 | IXYS |
Description: MOSFET N-CH 650V 80A TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 40A, 10V Power Dissipation (Max): 890W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 4mA Supplier Device Package: TO-264AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8245 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. |
 |
IXFK80N65X2 | IXYS |
MOSFETs 650V/80A Ultra Junction X2-Class |
товару немає в наявності |
В кошику од. на суму грн. |
| IXFK80N65X2 |
|
Виробник: IXYS
Description: MOSFET N-CH 650V 80A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 40A, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Supplier Device Package: TO-264AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8245 pF @ 25 V
Description: MOSFET N-CH 650V 80A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 40A, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Supplier Device Package: TO-264AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8245 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| IXFK80N65X2 |
|
Виробник: IXYS
MOSFETs 650V/80A Ultra Junction X2-Class
MOSFETs 650V/80A Ultra Junction X2-Class
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В кошику
од. на суму грн.