IXFL30N120P IXYS

Description: MOSFET N-CH 1200V 18A I5PAK, Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 310 nC @ 10 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: ISOPLUSi5-Pak™, Vgs(th) (Max) @ Id: 6.5V @ 1mA, Power Dissipation (Max): 357W (Tc), Rds On (Max) @ Id, Vgs: 380mOhm @ 15A, 10V, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: ISOPLUSi5-Pak™, Packaging: Tube.