IXFL60N80P IXYS
Виробник: IXYS
Description: MOSFET N-CH 800V 40A ISOPLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 30A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: ISOPLUS264™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18000 pF @ 25 V
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Технічний опис IXFL60N80P IXYS
Description: MOSFET N-CH 800V 40A ISOPLUS264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 150mOhm @ 30A, 10V, Power Dissipation (Max): 625W (Tc), Vgs(th) (Max) @ Id: 5V @ 8mA, Supplier Device Package: ISOPLUS264™, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 18000 pF @ 25 V.
Інші пропозиції IXFL60N80P
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
IXFL60N80P | IXYS |
MOSFETs 42 Amps 800V 0.15 Rds |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. |
 |
IXFL60N80P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 40A; 625W; 250ns Case: ISOPLUS264™ Reverse recovery time: 250ns Power dissipation: 625W Gate charge: 250nC Polarisation: unipolar Technology: HiPerFET™; Polar™ Drain current: 40A Kind of channel: enhancement Drain-source voltage: 800V Type of transistor: N-MOSFET Gate-source voltage: ±30V Kind of package: tube On-state resistance: 0.15Ω Mounting: THT |
товару немає в наявності |
В кошику од. на суму грн. |
| IXFL60N80P |
|
Виробник: IXYS
MOSFETs 42 Amps 800V 0.15 Rds
MOSFETs 42 Amps 800V 0.15 Rds
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику
од. на суму грн.
| IXFL60N80P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 40A; 625W; 250ns
Case: ISOPLUS264™
Reverse recovery time: 250ns
Power dissipation: 625W
Gate charge: 250nC
Polarisation: unipolar
Technology: HiPerFET™; Polar™
Drain current: 40A
Kind of channel: enhancement
Drain-source voltage: 800V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
On-state resistance: 0.15Ω
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 40A; 625W; 250ns
Case: ISOPLUS264™
Reverse recovery time: 250ns
Power dissipation: 625W
Gate charge: 250nC
Polarisation: unipolar
Technology: HiPerFET™; Polar™
Drain current: 40A
Kind of channel: enhancement
Drain-source voltage: 800V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
On-state resistance: 0.15Ω
Mounting: THT
товару немає в наявності
В кошику
од. на суму грн.