IXFL82N60P IXYS
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 55A; 625W; ISOPLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 55A
Power dissipation: 625W
Case: ISOPLUS264™
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
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Технічний опис IXFL82N60P IXYS
Description: MOSFET N-CH 600V 55A ISOPLUS264, Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: ISOPLUS264™, Vgs(th) (Max) @ Id: 5V @ 8mA, Power Dissipation (Max): 625W (Tc), Rds On (Max) @ Id, Vgs: 78mOhm @ 41A, 10V, Current - Continuous Drain (Id) @ 25°C: 55A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-264-3, TO-264AA, Packaging: Tube.
Інші пропозиції IXFL82N60P
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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IXFL82N60P | Виробник : Littelfuse Inc. |
Description: MOSFET N-CH 600V 55A ISOPLUS264 Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: ISOPLUS264™ Vgs(th) (Max) @ Id: 5V @ 8mA Power Dissipation (Max): 625W (Tc) Rds On (Max) @ Id, Vgs: 78mOhm @ 41A, 10V Current - Continuous Drain (Id) @ 25°C: 55A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Packaging: Tube |
товару немає в наявності |
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IXFL82N60P | Виробник : IXYS |
MOSFETs 82 Amps 600V 0.78 Ohm Rds |
товару немає в наявності |