IXFM10N90 IXYS

littelfuse_discrete_mosfets_n-channel_hiperfets_ixfh12n90_datasheet.pdf.pdf

Виробник: IXYS
Description: MOSFET N-CH 900V 10A TO204AA
Packaging: Tube
Package / Case: TO-204AA, TO-3
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-204AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V

товар відсутній

Відгуки про товар

Написати відгук

Технічний опис IXFM10N90 IXYS

Description: MOSFET N-CH 900V 10A TO204AA, Packaging: Tube, Package / Case: TO-204AA, TO-3, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Rds On (Max) @ Id, Vgs: 1.1Ohm @ 5A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 4mA, Supplier Device Package: TO-204AA, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 900 V, Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V.

Інші пропозиції IXFM10N90

Фото	Назва	Виробник	Інформація	Доступність	Ціна без ПДВ
	IXFM10N90	Виробник : IXYS	MOSFET	товар відсутній