IXFN100N50Q3 IXYS
Виробник: IXYS
Description: MOSFET N-CH 500V 82A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Rds On (Max) @ Id, Vgs: 49mOhm @ 50A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 25 V
Description: MOSFET N-CH 500V 82A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Rds On (Max) @ Id, Vgs: 49mOhm @ 50A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 25 V
на замовлення 9 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 3821.76 грн |
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Технічний опис IXFN100N50Q3 IXYS
Description: MOSFET N-CH 500V 82A SOT227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 82A (Tc), Rds On (Max) @ Id, Vgs: 49mOhm @ 50A, 10V, Power Dissipation (Max): 960W (Tc), Vgs(th) (Max) @ Id: 6.5V @ 8mA, Supplier Device Package: SOT-227B, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 25 V.
Інші пропозиції IXFN100N50Q3
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IXFN100N50Q3 | Виробник : Littelfuse | Trans MOSFET N-CH 500V 82A 4-Pin SOT-227B |
товар відсутній |
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IXFN100N50Q3 | Виробник : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 82A; SOT227B; screw; Idm: 300A Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 500V Drain current: 82A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 49mΩ Pulsed drain current: 300A Power dissipation: 960W Technology: HiPerFET™; Q3-Class Kind of channel: enhanced Gate charge: 255nC Reverse recovery time: 250ns Gate-source voltage: ±40V Mechanical mounting: screw кількість в упаковці: 1 шт |
товар відсутній |
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IXFN100N50Q3 | Виробник : IXYS | Discrete Semiconductor Modules Q3Class HiPerFET Pwr MOSFET 500V/82A |
товар відсутній |
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IXFN100N50Q3 | Виробник : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 82A; SOT227B; screw; Idm: 300A Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 500V Drain current: 82A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 49mΩ Pulsed drain current: 300A Power dissipation: 960W Technology: HiPerFET™; Q3-Class Kind of channel: enhanced Gate charge: 255nC Reverse recovery time: 250ns Gate-source voltage: ±40V Mechanical mounting: screw |
товар відсутній |