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IXFN100N50Q3 Littelfuse

Name: IXFN100N50Q3
Brand: IXYS
SKU: 459856746-1
Price: 4492.19 UAH
Availability: BackOrder

e_mosfets_n-channel_hiperfets_ixfn100n50q3_datasheet.pdf.pdf

Виробник: Littelfuse
Trans MOSFET N-CH 500V 82A 4-Pin SOT-227B

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Технічний опис IXFN100N50Q3 Littelfuse

Description: MOSFET N-CH 500V 82A SOT227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 82A (Tc), Rds On (Max) @ Id, Vgs: 49mOhm @ 50A, 10V, Power Dissipation (Max): 960W (Tc), Vgs(th) (Max) @ Id: 6.5V @ 8mA, Supplier Device Package: SOT-227B, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 25 V.

Інші пропозиції IXFN100N50Q3

Назва	Виробник	Інформація	Доступність	Ціна
IXFN100N50Q3	Виробник : IXYS	Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 82A; SOT227B; screw; Idm: 300A Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 500V Drain current: 82A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 49mΩ Pulsed drain current: 300A Power dissipation: 960W Technology: HiPerFET™; Q3-Class Kind of channel: enhancement Gate charge: 255nC Reverse recovery time: 250ns Gate-source voltage: ±40V Mechanical mounting: screw кількість в упаковці: 1 шт	товару немає в наявності	В кошику од. на суму грн.
IXFN100N50Q3	Виробник : IXYS	Description: MOSFET N-CH 500V 82A SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 82A (Tc) Rds On (Max) @ Id, Vgs: 49mOhm @ 50A, 10V Power Dissipation (Max): 960W (Tc) Vgs(th) (Max) @ Id: 6.5V @ 8mA Supplier Device Package: SOT-227B Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 25 V	товару немає в наявності	В кошику од. на суму грн.
IXFN100N50Q3	Виробник : IXYS	Discrete Semiconductor Modules Q3Class HiPerFET Pwr MOSFET 500V/82A	товару немає в наявності	В кошику од. на суму грн.
IXFN100N50Q3	Виробник : IXYS	Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 82A; SOT227B; screw; Idm: 300A Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 500V Drain current: 82A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 49mΩ Pulsed drain current: 300A Power dissipation: 960W Technology: HiPerFET™; Q3-Class Kind of channel: enhancement Gate charge: 255nC Reverse recovery time: 250ns Gate-source voltage: ±40V Mechanical mounting: screw	товару немає в наявності	В кошику од. на суму грн.