IXFN100N65X2 IXYS
Виробник: IXYSDescription: MOSFET N-CH 650V 78A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 50A, 10V
Power Dissipation (Max): 595W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 183 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10800 pF @ 25 V
на замовлення 16 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2241.15 грн |
| 10+ | 1918.05 грн |
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Технічний опис IXFN100N65X2 IXYS
Description: MOSFET N-CH 650V 78A SOT227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 78A (Tc), Rds On (Max) @ Id, Vgs: 30mOhm @ 50A, 10V, Power Dissipation (Max): 595W (Tc), Vgs(th) (Max) @ Id: 5V @ 4mA, Supplier Device Package: SOT-227B, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 183 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10800 pF @ 25 V.
Інші пропозиції IXFN100N65X2
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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IXFN100N65X2 | Виробник : Littelfuse |
Trans MOSFET N-CH 650V 78A 4-Pin SOT-227B |
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IXFN100N65X2 | Виробник : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 650V; 78A; SOT227B; screw; Idm: 200A Technology: HiPerFET™; X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 78A Pulsed drain current: 200A Power dissipation: 595W Case: SOT227B Gate-source voltage: ±40V On-state resistance: 30mΩ Gate charge: 183nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 200ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor кількість в упаковці: 1 шт |
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IXFN100N65X2 | Виробник : IXYS |
Discrete Semiconductor Modules 650V/78A miniBLOC SOT-227 |
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IXFN100N65X2 | Виробник : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 650V; 78A; SOT227B; screw; Idm: 200A Technology: HiPerFET™; X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 78A Pulsed drain current: 200A Power dissipation: 595W Case: SOT227B Gate-source voltage: ±40V On-state resistance: 30mΩ Gate charge: 183nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 200ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
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