IXFN102N30P IXYS
Виробник: IXYSDescription: MOSFET N-CH 300V 88A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 500mA, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 224 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1856 грн |
Відгуки про товар
Написати відгук
Технічний опис IXFN102N30P IXYS
Description: MOSFET N-CH 300V 88A SOT227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 88A (Tc), Rds On (Max) @ Id, Vgs: 33mOhm @ 500mA, 10V, Power Dissipation (Max): 600W (Tc), Vgs(th) (Max) @ Id: 5V @ 4mA, Supplier Device Package: SOT-227B, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 300 V, Gate Charge (Qg) (Max) @ Vgs: 224 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V.
Інші пропозиції IXFN102N30P
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
 |
IXFN102N30P | Виробник : Littelfuse |
Trans MOSFET N-CH 300V 86A 4-Pin SOT-227B |
товар відсутній |
|
 |
IXFN102N30P | Виробник : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 300V; 86A; SOT227B; screw; Idm: 250A Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 300V Drain current: 86A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 33mΩ Pulsed drain current: 250A Power dissipation: 570W Technology: HiPerFET™; Polar™ Kind of channel: enhanced Gate charge: 224nC Reverse recovery time: 200ns Gate-source voltage: ±30V Mechanical mounting: screw кількість в упаковці: 1 шт |
товар відсутній |
|
 |
IXFN102N30P | Виробник : Littelfuse |
Trans MOSFET N-CH 300V 86A 4-Pin SOT-227B |
товар відсутній |
|
 |
IXFN102N30P | Виробник : IXYS |
Discrete Semiconductor Modules 102 Amps 300V 0.033 Rds |
товар відсутній |
|
|
|
IXFN102N30P | Виробник : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 300V; 86A; SOT227B; screw; Idm: 250A Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 300V Drain current: 86A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 33mΩ Pulsed drain current: 250A Power dissipation: 570W Technology: HiPerFET™; Polar™ Kind of channel: enhanced Gate charge: 224nC Reverse recovery time: 200ns Gate-source voltage: ±30V Mechanical mounting: screw |
товар відсутній |