IXFN102N30P Littelfuse Inc.
Виробник: Littelfuse Inc.
Description: MOSFET N-CH 300V 88A SOT227B
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 224 nC @ 10 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SOT-227B
Vgs(th) (Max) @ Id: 5V @ 4mA
Power Dissipation (Max): 600W (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1449.97 грн |
| 10+ | 1244.08 грн |
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Технічний опис IXFN102N30P Littelfuse Inc.
Description: MOSFET N-CH 300V 88A SOT227B, Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 224 nC @ 10 V, Drain to Source Voltage (Vdss): 300 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: SOT-227B, Vgs(th) (Max) @ Id: 5V @ 4mA, Power Dissipation (Max): 600W (Tc), Rds On (Max) @ Id, Vgs: 33mOhm @ 500mA, 10V, Current - Continuous Drain (Id) @ 25°C: 88A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Chassis Mount, Package / Case: SOT-227-4, miniBLOC, Packaging: Tube.
Інші пропозиції IXFN102N30P
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
IXFN102N30P | IXYS |
Discrete Semiconductor Modules 102 Amps 300V 0.033 Rds |
товару немає в наявності |
В кошику од. на суму грн. |
 |
IXFN102N30P | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 300V; 86A; SOT227B; screw; Idm: 250A Electrical mounting: screw Kind of channel: enhancement Mechanical mounting: screw Technology: HiPerFET™; Polar™ Case: SOT227B Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Polarisation: unipolar Gate charge: 224nC Reverse recovery time: 200ns On-state resistance: 33mΩ Gate-source voltage: ±30V Drain current: 86A Drain-source voltage: 300V Pulsed drain current: 250A Power dissipation: 570W |
товару немає в наявності |
В кошику од. на суму грн. |
| IXFN102N30P |
|
Виробник: IXYS
Discrete Semiconductor Modules 102 Amps 300V 0.033 Rds
Discrete Semiconductor Modules 102 Amps 300V 0.033 Rds
товару немає в наявності
В кошику
од. на суму грн.
| IXFN102N30P |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 86A; SOT227B; screw; Idm: 250A
Electrical mounting: screw
Kind of channel: enhancement
Mechanical mounting: screw
Technology: HiPerFET™; Polar™
Case: SOT227B
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Polarisation: unipolar
Gate charge: 224nC
Reverse recovery time: 200ns
On-state resistance: 33mΩ
Gate-source voltage: ±30V
Drain current: 86A
Drain-source voltage: 300V
Pulsed drain current: 250A
Power dissipation: 570W
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 86A; SOT227B; screw; Idm: 250A
Electrical mounting: screw
Kind of channel: enhancement
Mechanical mounting: screw
Technology: HiPerFET™; Polar™
Case: SOT227B
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Polarisation: unipolar
Gate charge: 224nC
Reverse recovery time: 200ns
On-state resistance: 33mΩ
Gate-source voltage: ±30V
Drain current: 86A
Drain-source voltage: 300V
Pulsed drain current: 250A
Power dissipation: 570W
товару немає в наявності
В кошику
од. на суму грн.