Технічний опис IXFN106N20 IXYS
Description: MOSFET N-CH 200V 106A SOT-227B, Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 380 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Not For New Designs, Supplier Device Package: SOT-227B, Vgs(th) (Max) @ Id: 4V @ 8mA, Power Dissipation (Max): 521W (Tc), Rds On (Max) @ Id, Vgs: 20mOhm @ 500mA, 10V, Current - Continuous Drain (Id) @ 25°C: 106A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Chassis Mount, Package / Case: SOT-227-4, miniBLOC, Packaging: Tube.
Інші пропозиції IXFN106N20
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| IXFN106N20 |
 MOSFET N-Channel , Id=106A, Vdss=200V, SOT-227B (miniBLOC) Група товару: Транзистори Од. вим: шт |
товару немає в наявності |
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IXFN106N20 | Виробник : IXYS |
Description: MOSFET N-CH 200V 106A SOT-227B Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 380 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Not For New Designs Supplier Device Package: SOT-227B Vgs(th) (Max) @ Id: 4V @ 8mA Power Dissipation (Max): 521W (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 106A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Packaging: Tube |
товару немає в наявності |
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IXFN106N20 | Виробник : IXYS |
Discrete Semiconductor Modules 200V 106A |
товару немає в наявності |