на замовлення 300 шт:
термін постачання 392-401 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2414.02 грн |
| 10+ | 2194.68 грн |
| 30+ | 1822.06 грн |
| 100+ | 1628.76 грн |
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Технічний опис IXFN160N30T IXYS
Description: MOSFET N-CH 300V 130A SOT227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 130A (Tc), Rds On (Max) @ Id, Vgs: 19mOhm @ 60A, 10V, Power Dissipation (Max): 900W (Tc), Vgs(th) (Max) @ Id: 5V @ 8mA, Supplier Device Package: SOT-227B, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 300 V, Gate Charge (Qg) (Max) @ Vgs: 335 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V.
Інші пропозиції IXFN160N30T
| Фото | Назва | Виробник | Інформація |
Доступність |
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IXFN160N30T Код товару: 162434 |
 Транзистори > IGBT |
товар відсутній
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IXFN160N30T | Виробник : Littelfuse |
Trans MOSFET N-CH 300V 130A 4-Pin SOT-227B |
товар відсутній |
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IXFN160N30T | Виробник : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 300V; 130A; SOT227B; screw; Idm: 444A Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 300V Drain current: 130A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 19mΩ Pulsed drain current: 444A Power dissipation: 900W Technology: GigaMOS™ Kind of channel: enhanced Gate charge: 376nC Reverse recovery time: 200ns Gate-source voltage: ±30V Mechanical mounting: screw кількість в упаковці: 1 шт |
товар відсутній |
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IXFN160N30T | Виробник : Littelfuse |
Trans MOSFET N-CH 300V 130A 4-Pin SOT-227B |
товар відсутній |
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 |
IXFN160N30T | Виробник : IXYS |
Description: MOSFET N-CH 300V 130A SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 60A, 10V Power Dissipation (Max): 900W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: SOT-227B Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 335 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V |
товар відсутній |
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IXFN160N30T | Виробник : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 300V; 130A; SOT227B; screw; Idm: 444A Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 300V Drain current: 130A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 19mΩ Pulsed drain current: 444A Power dissipation: 900W Technology: GigaMOS™ Kind of channel: enhanced Gate charge: 376nC Reverse recovery time: 200ns Gate-source voltage: ±30V Mechanical mounting: screw |
товар відсутній |