IXFN170N30P IXYS
Виробник: IXYS
Description: MOSFET N-CH 300V 138A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 138A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 85A, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 258 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 25 V
Description: MOSFET N-CH 300V 138A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 138A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 85A, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 258 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 25 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 3115.57 грн |
Відгуки про товар
Написати відгук
Технічний опис IXFN170N30P IXYS
Description: MOSFET N-CH 300V 138A SOT-227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 138A (Tc), Rds On (Max) @ Id, Vgs: 18mOhm @ 85A, 10V, Power Dissipation (Max): 890W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 1mA, Supplier Device Package: SOT-227B, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 300 V, Gate Charge (Qg) (Max) @ Vgs: 258 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 25 V.
Інші пропозиції IXFN170N30P за ціною від 2268.84 грн до 3384.28 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IXFN170N30P | Виробник : IXYS | Discrete Semiconductor Modules 138 Amps 300V 0.018 Rds |
на замовлення 100 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||
IXFN170N30P | Виробник : Littelfuse | Trans MOSFET N-CH 300V 138A 4-Pin SOT-227B |
товар відсутній |
||||||||||||||
IXFN170N30P | Виробник : Littelfuse | Trans MOSFET N-CH 300V 138A 4-Pin SOT-227B |
товар відсутній |
||||||||||||||
IXFN170N30P | Виробник : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 300V; 138A; SOT227B; screw; Idm: 500A Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 300V Drain current: 138A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 18mΩ Pulsed drain current: 500A Power dissipation: 890W Technology: HiPerFET™; Polar™ Kind of channel: enhanced Gate charge: 258nC Reverse recovery time: 200ns Gate-source voltage: ±30V Mechanical mounting: screw кількість в упаковці: 1 шт |
товар відсутній |
||||||||||||||
IXFN170N30P | Виробник : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 300V; 138A; SOT227B; screw; Idm: 500A Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 300V Drain current: 138A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 18mΩ Pulsed drain current: 500A Power dissipation: 890W Technology: HiPerFET™; Polar™ Kind of channel: enhanced Gate charge: 258nC Reverse recovery time: 200ns Gate-source voltage: ±30V Mechanical mounting: screw |
товар відсутній |