IXFN200N10P IXYS
Виробник: IXYS
Description: MOSFET N-CH 100V 200A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 500mA, 10V
Power Dissipation (Max): 680W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 235 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 25 V
Description: MOSFET N-CH 100V 200A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 500mA, 10V
Power Dissipation (Max): 680W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 235 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 25 V
на замовлення 37 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 1856 грн |
10+ | 1588.5 грн |
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Технічний опис IXFN200N10P IXYS
Description: MOSFET N-CH 100V 200A SOT-227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 200A (Tc), Rds On (Max) @ Id, Vgs: 7.5mOhm @ 500mA, 10V, Power Dissipation (Max): 680W (Tc), Vgs(th) (Max) @ Id: 5V @ 8mA, Supplier Device Package: SOT-227B, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 235 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 25 V.
Інші пропозиції IXFN200N10P за ціною від 1361.26 грн до 2017.3 грн
Фото | Назва | Виробник | Інформація |
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IXFN200N10P | Виробник : IXYS SEMICONDUCTOR |
Description: IXYS SEMICONDUCTOR - IXFN200N10P - Leistungs-MOSFET, PolarFET, n-Kanal, 100 V, 200 A, 0.0075 ohm, ISOTOP, Modul tariffCode: 85412900 Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 200A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 5V euEccn: NLR Verlustleistung: 680W Anzahl der Pins: 4Pin(s) productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 15V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0075ohm |
на замовлення 71 шт: термін постачання 21-31 дні (днів) |
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IXFN200N10P | Виробник : IXYS | Discrete Semiconductor Modules 200 Amps 100V 0.0075 Rds |
на замовлення 829 шт: термін постачання 21-30 дні (днів) |
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IXFN200N10P | Виробник : Littelfuse | Trans MOSFET N-CH 100V 200A 4-Pin SOT-227B |
товар відсутній |
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IXFN200N10P | Виробник : Littelfuse | Trans MOSFET N-CH 100V 200A 4-Pin SOT-227B |
товар відсутній |
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IXFN200N10P | Виробник : Littelfuse | Trans MOSFET N-CH 100V 200A 4-Pin SOT-227B |
товар відсутній |
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IXFN200N10P | Виробник : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 100V; 200A; SOT227B; screw; Idm: 400A Technology: HiPerFET™; Polar™ Case: SOT227B On-state resistance: 7.5mΩ Power dissipation: 680W Drain current: 200A Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Gate charge: 235nC Drain-source voltage: 100V Reverse recovery time: 150ns Kind of channel: enhanced Gate-source voltage: ±30V Semiconductor structure: single transistor Pulsed drain current: 400A Polarisation: unipolar кількість в упаковці: 1 шт |
товар відсутній |
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IXFN200N10P | Виробник : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 100V; 200A; SOT227B; screw; Idm: 400A Technology: HiPerFET™; Polar™ Case: SOT227B On-state resistance: 7.5mΩ Power dissipation: 680W Drain current: 200A Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Gate charge: 235nC Drain-source voltage: 100V Reverse recovery time: 150ns Kind of channel: enhanced Gate-source voltage: ±30V Semiconductor structure: single transistor Pulsed drain current: 400A Polarisation: unipolar |
товар відсутній |