IXFN210N30P3

Виробник: IXYS
Category: Transistor modules
Description: Module; single transistor; 300V; 192A; SOT227B; screw; Idm: 550A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 300V
Drain current: 192A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 14.5mΩ
Pulsed drain current: 550A
Power dissipation: 1.5kW
Technology: HiPerFET™; Polar3™
Kind of channel: enhancement
Gate charge: 268nC
Reverse recovery time: 250ns
Gate-source voltage: ±30V
Mechanical mounting: screw

Виробник: IXYS
Description: MOSFET N-CH 300V 192A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 192A (Tc)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 105A, 10V
Power Dissipation (Max): 1500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 268 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16200 pF @ 25 V

Виробник: IXYS
MOSFET Modules N-Channel: Power MOSFET w/Fast Diode

Виробник: LITTELFUSE
Description: LITTELFUSE - IXFN210N30P3 - MOSFET-Transistor, n-Kanal, 192 A, 300 V, 0.0145 ohm, 10 V, 5 V
tariffCode: 85412900
euEccn: NLR
Drain-Source-Spannung Vds: 300V
rohsCompliant: YES
Dauer-Drainstrom Id: 192A
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
Verlustleistung Pd: 1.5kW
Gate-Source-Schwellenspannung, max.: 5V
Verlustleistung: 1.5kW
SVHC: To Be Advised
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: n-Kanal
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.0145ohm
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.0145ohm

MOSFET N-Channel: Power MOSFET w/Fast Diode Транзистори