IXFN220N20X3 IXYS
Виробник: IXYS
Description: MOSFET N-CH 200V 160A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 110A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 204 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2388.92 грн |
| 10+ | 1704.39 грн |
| 100+ | 1512.33 грн |
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Технічний опис IXFN220N20X3 IXYS
Description: MOSFET N-CH 200V 160A SOT227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 160A (Tc), Rds On (Max) @ Id, Vgs: 6.2mOhm @ 110A, 10V, Power Dissipation (Max): 390W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 4mA, Supplier Device Package: SOT-227B, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 204 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V.
Інші пропозиції IXFN220N20X3 за ціною від 1931.57 грн до 3034.74 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
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IXFN220N20X3 | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 200V; 160A; SOT227B; screw; Idm: 500A Case: SOT227B Electrical mounting: screw Mechanical mounting: screw Semiconductor structure: single transistor Polarisation: unipolar Kind of channel: enhancement Gate-source voltage: ±30V Reverse recovery time: 128ns Gate charge: 204nC On-state resistance: 6.2mΩ Technology: HiPerFET™; X3-Class Drain current: 160A Pulsed drain current: 500A Drain-source voltage: 200V Power dissipation: 390W Type of semiconductor module: MOSFET transistor |
на замовлення 1 шт: термін постачання 14-30 дні (днів) |
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IXFN220N20X3 | IXYS |
MOSFET Modules MBLOC 200V 160A N-CH X3CLASS |
на замовлення 595 шт: термін постачання 21-30 дні (днів) |
|
| IXFN220N20X3 |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 160A; SOT227B; screw; Idm: 500A
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±30V
Reverse recovery time: 128ns
Gate charge: 204nC
On-state resistance: 6.2mΩ
Technology: HiPerFET™; X3-Class
Drain current: 160A
Pulsed drain current: 500A
Drain-source voltage: 200V
Power dissipation: 390W
Type of semiconductor module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 160A; SOT227B; screw; Idm: 500A
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±30V
Reverse recovery time: 128ns
Gate charge: 204nC
On-state resistance: 6.2mΩ
Technology: HiPerFET™; X3-Class
Drain current: 160A
Pulsed drain current: 500A
Drain-source voltage: 200V
Power dissipation: 390W
Type of semiconductor module: MOSFET transistor
на замовлення 1 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2693.61 грн |
| IXFN220N20X3 |
|
Виробник: IXYS
MOSFET Modules MBLOC 200V 160A N-CH X3CLASS
MOSFET Modules MBLOC 200V 160A N-CH X3CLASS
на замовлення 595 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 3034.74 грн |
| 10+ | 2542.04 грн |
| 100+ | 1931.57 грн |