IXFN220N20X3 IXYS
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 160A; SOT227B; screw; Idm: 500A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 200V
Drain current: 160A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 6.2mΩ
Pulsed drain current: 500A
Power dissipation: 390W
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate charge: 204nC
Reverse recovery time: 128ns
Gate-source voltage: ±30V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 160A; SOT227B; screw; Idm: 500A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 200V
Drain current: 160A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 6.2mΩ
Pulsed drain current: 500A
Power dissipation: 390W
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate charge: 204nC
Reverse recovery time: 128ns
Gate-source voltage: ±30V
Mechanical mounting: screw
на замовлення 7 шт:
термін постачання 21-30 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 2000.76 грн |
2+ | 1756.13 грн |
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Технічний опис IXFN220N20X3 IXYS
Description: MOSFET N-CH 200V 160A SOT227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 160A (Tc), Rds On (Max) @ Id, Vgs: 6.2mOhm @ 110A, 10V, Power Dissipation (Max): 390W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 4mA, Supplier Device Package: SOT-227B, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 204 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V.
Інші пропозиції IXFN220N20X3 за ціною від 1615.48 грн до 2631.02 грн
Фото | Назва | Виробник | Інформація |
Доступність |
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IXFN220N20X3 | Виробник : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 200V; 160A; SOT227B; screw; Idm: 500A Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 200V Drain current: 160A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 6.2mΩ Pulsed drain current: 500A Power dissipation: 390W Technology: HiPerFET™; X3-Class Kind of channel: enhanced Gate charge: 204nC Reverse recovery time: 128ns Gate-source voltage: ±30V Mechanical mounting: screw кількість в упаковці: 1 шт |
на замовлення 7 шт: термін постачання 7-14 дні (днів) |
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IXFN220N20X3 | Виробник : IXYS | MOSFET MSFT N-CH ULTRA JNCT X3 MINI |
на замовлення 813 шт: термін постачання 21-30 дні (днів) |
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IXFN220N20X3 | Виробник : Littelfuse | Trans MOSFET N-CH 200V 160A 4-Pin SOT-227B |
товар відсутній |
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IXFN220N20X3 | Виробник : IXYS |
Description: MOSFET N-CH 200V 160A SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Rds On (Max) @ Id, Vgs: 6.2mOhm @ 110A, 10V Power Dissipation (Max): 390W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 4mA Supplier Device Package: SOT-227B Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 204 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V |
товар відсутній |