Продукція > IXYS > IXFN25N90
IXFN25N90

IXFN25N90 IXYS


littelfuse_discrete_mosfets_n-channel_hiperfets_ixfn26n90_datasheet.pdf.pdf Виробник: IXYS
Description: MOSFET N-CH 900V 25A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 500mA, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10800 pF @ 25 V
товар відсутній

Відгуки про товар
Написати відгук

Технічний опис IXFN25N90 IXYS

Description: MOSFET N-CH 900V 25A SOT-227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), Rds On (Max) @ Id, Vgs: 330mOhm @ 500mA, 10V, Power Dissipation (Max): 600W (Tc), Vgs(th) (Max) @ Id: 5V @ 8mA, Supplier Device Package: SOT-227B, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 900 V, Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10800 pF @ 25 V.

Інші пропозиції IXFN25N90

Фото Назва Виробник Інформація Доступність
Ціна без ПДВ
IXFN25N90 IXFN25N90 Виробник : IXYS ixys_ds97526fixfn25_26n90-1547442.pdf Discrete Semiconductor Modules 25 Amps 900V 0.33 Rds
товар відсутній