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IXFN30N120P Littelfuse

Name: IXFN30N120P
Brand: IXYS
SKU: 459856779-1
Price: 5081.1 UAH
Availability: BackOrder

te_mosfets_n-channel_hiperfets_ixfn30n120p_datasheet.pdf.pdf

Виробник: Littelfuse
Trans MOSFET N-CH 1.2KV 30A 4-Pin SOT-227B

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Технічний опис IXFN30N120P Littelfuse

Description: MOSFET N-CH 1200V 30A SOT-227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 350mOhm @ 500mA, 10V, Power Dissipation (Max): 890W (Tc), Vgs(th) (Max) @ Id: 6.5V @ 1mA, Supplier Device Package: SOT-227B, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 310 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V.

Інші пропозиції IXFN30N120P

Назва	Виробник	Інформація	Доступність	Ціна
IXFN30N120P	Виробник : IXYS	Category: Transistor modules MOSFET Description: Module; single transistor; 1.2kV; 30A; SOT227B; screw; Idm: 75A Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 30A Pulsed drain current: 75A Power dissipation: 890W Case: SOT227B On-state resistance: 0.35Ω Gate charge: 310nC Electrical mounting: screw Mechanical mounting: screw Reverse recovery time: 300ns Kind of channel: enhancement Gate-source voltage: ±40V Semiconductor structure: single transistor Type of semiconductor module: MOSFET transistor кількість в упаковці: 1 шт	товару немає в наявності	В кошику од. на суму грн.
IXFN30N120P	Виробник : Littelfuse Inc.	Description: MOSFET N-CH 1200V 30A SOT-227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 350mOhm @ 500mA, 10V Power Dissipation (Max): 890W (Tc) Vgs(th) (Max) @ Id: 6.5V @ 1mA Supplier Device Package: SOT-227B Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 310 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V	товару немає в наявності	В кошику од. на суму грн.
IXFN30N120P	Виробник : IXYS	Discrete Semiconductor Modules 30 Amps 1200V 0.35 Rds	товару немає в наявності	В кошику од. на суму грн.
IXFN30N120P	Виробник : IXYS	Category: Transistor modules MOSFET Description: Module; single transistor; 1.2kV; 30A; SOT227B; screw; Idm: 75A Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 30A Pulsed drain current: 75A Power dissipation: 890W Case: SOT227B On-state resistance: 0.35Ω Gate charge: 310nC Electrical mounting: screw Mechanical mounting: screw Reverse recovery time: 300ns Kind of channel: enhancement Gate-source voltage: ±40V Semiconductor structure: single transistor Type of semiconductor module: MOSFET transistor	товару немає в наявності	В кошику од. на суму грн.