IXFN32N100P Littelfuse Inc.
Виробник: Littelfuse Inc.
Description: MOSFET N-CH 1000V 27A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 16A, 10V
Power Dissipation (Max): 690W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 25 V
Description: MOSFET N-CH 1000V 27A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 16A, 10V
Power Dissipation (Max): 690W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 25 V
на замовлення 623 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 2741.79 грн |
| 10+ | 1963.28 грн |
| 100+ | 1761.17 грн |
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Технічний опис IXFN32N100P Littelfuse Inc.
Description: MOSFET N-CH 1000V 27A SOT-227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 27A (Tc), Rds On (Max) @ Id, Vgs: 320mOhm @ 16A, 10V, Power Dissipation (Max): 690W (Tc), Vgs(th) (Max) @ Id: 6.5V @ 1mA, Supplier Device Package: SOT-227B, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 25 V.
Інші пропозиції IXFN32N100P за ціною від 2361.55 грн до 2892.93 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
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IXFN32N100P | Виробник : IXYS |
 MOSFET Modules 32 Amps 1000V 0.32 Rds |
на замовлення 221 шт: термін постачання 21-30 дні (днів) |
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IXFN32N100P | Виробник : Littelfuse |
Trans MOSFET N-CH 1KV 27A 4-Pin SOT-227B |
товару немає в наявності |
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IXFN32N100P | Виробник : Littelfuse |
Trans MOSFET N-CH 1KV 27A 4-Pin SOT-227B |
товару немає в наявності |
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IXFN32N100P | Виробник : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 27A; SOT227B; screw; Idm: 75A; 690W Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 1kV Drain current: 27A Pulsed drain current: 75A Power dissipation: 690W Case: SOT227B Gate-source voltage: ±40V On-state resistance: 0.32Ω Gate charge: 225nC Kind of channel: enhancement Type of semiconductor module: MOSFET transistor Mechanical mounting: screw Electrical mounting: screw Semiconductor structure: single transistor Reverse recovery time: 300ns |
товару немає в наявності |