Технічний опис IXFN32N100Q3 Littelfuse
Description: MOSFET N-CH 1000V 28A SOT227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 28A (Tc), Rds On (Max) @ Id, Vgs: 320mOhm @ 16A, 10V, Power Dissipation (Max): 780W (Tc), Vgs(th) (Max) @ Id: 6.5V @ 8mA, Supplier Device Package: SOT-227B, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9940 pF @ 25 V.
Інші пропозиції IXFN32N100Q3
| Фото | Назва | Виробник | Інформація |
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IXFN32N100Q3 | Виробник : IXYS |
 Category: Transistor modules MOSFETDescription: Module; single transistor; 1kV; 28A; SOT227B; screw; Idm: 96A; 780W Technology: HiPerFET™; Q3-Class Polarisation: unipolar Drain-source voltage: 1kV Drain current: 28A Pulsed drain current: 96A Power dissipation: 780W Case: SOT227B Gate-source voltage: ±40V On-state resistance: 0.32Ω Gate charge: 195nC Kind of channel: enhancement Mechanical mounting: screw Type of module: MOSFET transistor Electrical mounting: screw Semiconductor structure: single transistor Reverse recovery time: 300ns кількість в упаковці: 1 шт |
товару немає в наявності |
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IXFN32N100Q3 | Виробник : IXYS |
Description: MOSFET N-CH 1000V 28A SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 320mOhm @ 16A, 10V Power Dissipation (Max): 780W (Tc) Vgs(th) (Max) @ Id: 6.5V @ 8mA Supplier Device Package: SOT-227B Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9940 pF @ 25 V |
товару немає в наявності |
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IXFN32N100Q3 | Виробник : IXYS |
Discrete Semiconductor Modules Q3Class HiPerFET Pwr MOSFET 1000V/28A |
товару немає в наявності |
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IXFN32N100Q3 | Виробник : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 28A; SOT227B; screw; Idm: 96A; 780W Technology: HiPerFET™; Q3-Class Polarisation: unipolar Drain-source voltage: 1kV Drain current: 28A Pulsed drain current: 96A Power dissipation: 780W Case: SOT227B Gate-source voltage: ±40V On-state resistance: 0.32Ω Gate charge: 195nC Kind of channel: enhancement Mechanical mounting: screw Type of module: MOSFET transistor Electrical mounting: screw Semiconductor structure: single transistor Reverse recovery time: 300ns |
товару немає в наявності |