Технічний опис IXFN32N60 IXYS
Description: MOSFET N-CH 600V 32A SOT227B, Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 325 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: SOT-227B, Vgs(th) (Max) @ Id: 4.5V @ 8mA, Power Dissipation (Max): 520AW (Tc), Rds On (Max) @ Id, Vgs: 250mOhm @ 500mA, 10V, Current - Continuous Drain (Id) @ 25°C: 32A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Chassis Mount, Package / Case: SOT-227-4, miniBLOC, Packaging: Tube.
Інші пропозиції IXFN32N60
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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IXFN32N60 | IXYS |
Description: MOSFET N-CH 600V 32A SOT227B Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 325 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: SOT-227B Vgs(th) (Max) @ Id: 4.5V @ 8mA Power Dissipation (Max): 520AW (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Packaging: Tube |
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В кошику од. на суму грн. |
 |
IXFN32N60 | IXYS |
 Discrete Semiconductor Modules 32 Amps 600V |
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В кошику од. на суму грн. |
| IXFN32N60 |
Виробник: IXYS
Description: MOSFET N-CH 600V 32A SOT227B
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 325 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SOT-227B
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Power Dissipation (Max): 520AW (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Description: MOSFET N-CH 600V 32A SOT227B
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 325 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SOT-227B
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Power Dissipation (Max): 520AW (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.