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Інші пропозиції IXFN32N80P
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
IXFN32N80P | IXYS |
 Description: MOSFET N-CH 800V 29A SOT-227BInput Capacitance (Ciss) (Max) @ Vds: 8820 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: SOT-227B Vgs(th) (Max) @ Id: 5V @ 8mA Power Dissipation (Max): 625W (Tc) Rds On (Max) @ Id, Vgs: 270mOhm @ 16A, 10V Current - Continuous Drain (Id) @ 25°C: 29A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. |
 |
IXFN32N80P | IXYS |
MOSFET Modules 29 Amps 800V 0.27 Rds |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. |
 |
IXFN32N80P | IXYS |
Category: Transistor drivers Description: Module; single transistor; 800V; 29A; SOT227B; screw; Idm: 250A Case: SOT227B Pulsed drain current: 250A Type of semiconductor module: MOSFET transistor Power dissipation: 625W Gate charge: 150nC Polarisation: unipolar Technology: HiPerFET™; PolarHV™ Drain current: 29A Kind of channel: enhancement Drain-source voltage: 800V Mechanical mounting: screw Electrical mounting: screw Gate-source voltage: ±40V Semiconductor structure: single transistor On-state resistance: 0.27Ω Reverse recovery time: 250ns |
товару немає в наявності |
В кошику од. на суму грн. |
| IXFN32N80P |
|
Виробник: IXYS
Description: MOSFET N-CH 800V 29A SOT-227B
Input Capacitance (Ciss) (Max) @ Vds: 8820 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SOT-227B
Vgs(th) (Max) @ Id: 5V @ 8mA
Power Dissipation (Max): 625W (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Description: MOSFET N-CH 800V 29A SOT-227B
Input Capacitance (Ciss) (Max) @ Vds: 8820 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SOT-227B
Vgs(th) (Max) @ Id: 5V @ 8mA
Power Dissipation (Max): 625W (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику
од. на суму грн.
| IXFN32N80P |
|
Виробник: IXYS
MOSFET Modules 29 Amps 800V 0.27 Rds
MOSFET Modules 29 Amps 800V 0.27 Rds
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику
од. на суму грн.
| IXFN32N80P |
|
Виробник: IXYS
Category: Transistor drivers
Description: Module; single transistor; 800V; 29A; SOT227B; screw; Idm: 250A
Case: SOT227B
Pulsed drain current: 250A
Type of semiconductor module: MOSFET transistor
Power dissipation: 625W
Gate charge: 150nC
Polarisation: unipolar
Technology: HiPerFET™; PolarHV™
Drain current: 29A
Kind of channel: enhancement
Drain-source voltage: 800V
Mechanical mounting: screw
Electrical mounting: screw
Gate-source voltage: ±40V
Semiconductor structure: single transistor
On-state resistance: 0.27Ω
Reverse recovery time: 250ns
Category: Transistor drivers
Description: Module; single transistor; 800V; 29A; SOT227B; screw; Idm: 250A
Case: SOT227B
Pulsed drain current: 250A
Type of semiconductor module: MOSFET transistor
Power dissipation: 625W
Gate charge: 150nC
Polarisation: unipolar
Technology: HiPerFET™; PolarHV™
Drain current: 29A
Kind of channel: enhancement
Drain-source voltage: 800V
Mechanical mounting: screw
Electrical mounting: screw
Gate-source voltage: ±40V
Semiconductor structure: single transistor
On-state resistance: 0.27Ω
Reverse recovery time: 250ns
товару немає в наявності
В кошику
од. на суму грн.