IXFN32N80P

IXFN32N80P


IXFN32N80P.pdf
Код товару: 114602
Виробник:
Транзистори > IGBT

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IXFN32N80P IXFN32N80P Виробник : Littelfuse ete_mosfets_n-channel_hiperfets_ixfn32n80p_datasheet.pdf.pdf Trans MOSFET N-CH 800V 29A 4-Pin SOT-227B
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IXFN32N80P IXFN32N80P Виробник : IXYS IXFN32N80P.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 29A; SOT227B; screw; Idm: 250A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 800V
Drain current: 29A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.27Ω
Pulsed drain current: 250A
Power dissipation: 625W
Technology: HiPerFET™; PolarHV™
Kind of channel: enhanced
Gate charge: 150nC
Reverse recovery time: 250ns
Gate-source voltage: ±40V
Mechanical mounting: screw
кількість в упаковці: 1 шт
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IXFN32N80P IXFN32N80P Виробник : IXYS IXFN32N80P.pdf Description: MOSFET N-CH 800V 29A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 16A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8820 pF @ 25 V
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IXFN32N80P IXFN32N80P Виробник : IXYS media-3320104.pdf Discrete Semiconductor Modules 29 Amps 800V 0.27 Rds
товар відсутній
IXFN32N80P IXFN32N80P Виробник : IXYS IXFN32N80P.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 29A; SOT227B; screw; Idm: 250A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 800V
Drain current: 29A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.27Ω
Pulsed drain current: 250A
Power dissipation: 625W
Technology: HiPerFET™; PolarHV™
Kind of channel: enhanced
Gate charge: 150nC
Reverse recovery time: 250ns
Gate-source voltage: ±40V
Mechanical mounting: screw
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