IXFN32N80P

Виробник: IXYS
Description: MOSFET N-CH 800V 29A SOT-227B
Input Capacitance (Ciss) (Max) @ Vds: 8820 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SOT-227B
Vgs(th) (Max) @ Id: 5V @ 8mA
Power Dissipation (Max): 625W (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube

Виробник: IXYS
MOSFET Modules 29 Amps 800V 0.27 Rds